auf Bestellung 24000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.34 EUR |
| 6000+ | 0.32 EUR |
| 9000+ | 0.3 EUR |
| 15000+ | 0.29 EUR |
| 21000+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3473CDV-T1-E3 Vishay
Description: MOSFET P-CH 12V 8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V, Power Dissipation (Max): 4.2W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V.
Weitere Produktangebote SI3473CDV-T1-E3 nach Preis ab 0.27 EUR bis 1.83 EUR
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SI3473CDV-T1-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH 12V 8A 6-Pin TSOP T/R |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3473CDV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 12V 8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V Power Dissipation (Max): 4.2W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3473CDV-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs -12V Vds 8V Vgs TSOP-6 |
auf Bestellung 2811 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3473CDV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 12V 8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 8.1A, 4.5V Power Dissipation (Max): 4.2W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 6 V |
auf Bestellung 5317 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI3473CDV-T1-E3 | Hersteller : VISHAY |
09+ SOP-14 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3473CDV-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 8A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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SI3473CDV-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 8A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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| SI3473CDV-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -8A; Idm: -20A Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: TrenchFET® Case: TSOP6 Polarisation: unipolar Pulsed drain current: -20A Drain-source voltage: -12V Drain current: -8A Gate charge: 65nC On-state resistance: 36mΩ Power dissipation: 4.2W Gate-source voltage: ±8V |
Produkt ist nicht verfügbar |