auf Bestellung 2450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 245+ | 0.6 EUR |
| 248+ | 0.57 EUR |
| 252+ | 0.54 EUR |
| 256+ | 0.51 EUR |
| 261+ | 0.48 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.43 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3499DV-T1-GE3 Vishay
Description: MOSFET P-CH 8V 5.3A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V, Power Dissipation (Max): 1.1W (Ta), Vgs(th) (Max) @ Id: 750mV @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V.
Weitere Produktangebote SI3499DV-T1-GE3 nach Preis ab 0.43 EUR bis 2.5 EUR
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SI3499DV-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 8V 5.3A 6-Pin TSOP T/R |
auf Bestellung 2450 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3499DV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 8V 5.3A 6-Pin TSOP T/R |
auf Bestellung 2294 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3499DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 8V 5.3A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 750mV @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3499DV-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 8.0V 7.0A 2.0W 23mohm @ 4.5V |
auf Bestellung 7961 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3499DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 8V 5.3A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.3A (Ta) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 4.5V Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 750mV @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V |
auf Bestellung 6070 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3499DV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 8V 5.3A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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| SI3499DV-T1-GE3 | Hersteller : VISHAY |
SI3499DV-T1-GE3 SMD P channel transistors |
Produkt ist nicht verfügbar |