Si3585DV-T1-GE3

Description: MOSFET N/P-CH 20V 2A/1.5A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 830mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A, Rds On (Max) @ Id, Vgs: 125mOhm @ 2.4A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 600mV @ 250µA (Min), Supplier Device Package: 6-TSOP, Part Status: Obsolete.