SI3590DV-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
| Anzahl | Preis |
|---|---|
| 3000+ | 0.51 EUR |
| 6000+ | 0.49 EUR |
| 9000+ | 0.48 EUR |
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Technische Details SI3590DV-T1-E3 Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.5A 6TSOP, Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Part Status: Active, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V, Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A, Drain to Source Voltage (Vdss): 30V, Power - Max: 830mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel.
Weitere Produktangebote SI3590DV-T1-E3 nach Preis ab 0.48 EUR bis 2.16 EUR
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SI3590DV-T1-E3 | Vishay Semiconductors |
MOSFETs -30V Vds 12V Vgs TSOP-6 N&P PAIR |
auf Bestellung 233027 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3590DV-T1-E3 | Vishay Siliconix |
Description: MOSFET N/P-CH 30V 2.5A 6TSOP Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A Drain to Source Voltage (Vdss): 30V Power - Max: 830mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel |
auf Bestellung 14340 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI3590DV-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -30V Vds 12V Vgs TSOP-6 N&P PAIR
MOSFETs -30V Vds 12V Vgs TSOP-6 N&P PAIR
auf Bestellung 233027 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.66 EUR |
| 10+ | 1.11 EUR |
| 100+ | 0.77 EUR |
| 500+ | 0.61 EUR |
| 1000+ | 0.55 EUR |
| 3000+ | 0.48 EUR |
| SI3590DV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Description: MOSFET N/P-CH 30V 2.5A 6TSOP
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 77mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A, 1.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 830mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
auf Bestellung 14340 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.16 EUR |
| 13+ | 1.37 EUR |
| 100+ | 0.91 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.64 EUR |