SI3905DV-T1-E3
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Lieferzeit 21-28 Tag (e)
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Technische Details SI3905DV-T1-E3
Description: MOSFET 2P-CH 8V 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.15W, Drain to Source Voltage (Vdss): 8V, Rds On (Max) @ Id, Vgs: 125mOhm @ 2.5A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Supplier Device Package: 6-TSOP.
Weitere Produktangebote SI3905DV-T1-E3
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SI3905DV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 8V 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.15W Drain to Source Voltage (Vdss): 8V Rds On (Max) @ Id, Vgs: 125mOhm @ 2.5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Supplier Device Package: 6-TSOP |
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