auf Bestellung 2220 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 360+ | 0.41 EUR |
| 366+ | 0.39 EUR |
| 372+ | 0.37 EUR |
| 378+ | 0.35 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4116DY-T1-E3 Vishay
Description: MOSFET N-CH 25V 18A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V, Power Dissipation (Max): 2.5W (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 15 V.
Weitere Produktangebote SI4116DY-T1-E3 nach Preis ab 0.30 EUR bis 2.29 EUR
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SI4116DY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 25V 18A 8-Pin SOIC N T/R |
auf Bestellung 2220 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4116DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 25V 18A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4116DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 25V 18A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4116DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 25V 18A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 15 V |
auf Bestellung 1200 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4116DY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFET 25V Vds 12V Vgs SO-8 |
auf Bestellung 3411 Stücke: Lieferzeit 703-707 Tag (e) |
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| SI4116DY-T1-E3 | Hersteller : VISHAY |
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auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4116DYT1E3 | Hersteller : VISHAY |
auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4116DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 25V 18A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4116DY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 18A; Idm: 50A; 5W Case: SO8 Mounting: SMD On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 50A Drain-source voltage: 25V Drain current: 18A Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI4116DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 25V 18A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 15 V |
Produkt ist nicht verfügbar |
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| SI4116DY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 18A; Idm: 50A; 5W Case: SO8 Mounting: SMD On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 50A Drain-source voltage: 25V Drain current: 18A |
Produkt ist nicht verfügbar |