| Anzahl | Preis |
|---|---|
| 4+ | 0.86 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.76 EUR |
| 2500+ | 0.72 EUR |
| 5000+ | 0.71 EUR |
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Technische Details SI4116DY-T1-E3 Vishay Semiconductors
Description: MOSFET N-CH 25V 18A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V, Drain to Source Voltage (Vdss): 25 V, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), 5W (Tc), Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: 8-SOIC, Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SI4116DY-T1-E3 nach Preis ab 0.8 EUR bis 1.14 EUR
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SI4116DY-T1-E3 | Vishay Siliconix |
 Description: MOSFET N-CH 25V 18A 8SOPackage / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Drain to Source Voltage (Vdss): 25 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 18A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 15 V |
auf Bestellung 1200 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4116DY-T1-E3 | VISHAY |
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auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| SI4116DYT1E3 | VISHAY |
auf Bestellung 35000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4116DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 25V 18A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 15 V
Description: MOSFET N-CH 25V 18A 8SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 15 V
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 1.14 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.8 EUR |
| SI4116DY-T1-E3 |
|
Hersteller: VISHAY
auf Bestellung 35000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SI4116DYT1E3 |
Hersteller: VISHAY
auf Bestellung 35000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH