SI4128DY-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 10.9A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4128DY-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 30V 10.9A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V, Power Dissipation (Max): 2.4W (Ta), 5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V.
Weitere Produktangebote SI4128DY-T1-E3 nach Preis ab 0.36 EUR bis 1.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SI4128DY-T1-E3 | Vishay Semiconductors |
MOSFET 30V Vds 20V Vgs SO-8 |
auf Bestellung 3326 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
SI4128DY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 10.9A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V Power Dissipation (Max): 2.4W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V |
auf Bestellung 8157 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
| SI4128DY-T1-E3 |
|
auf Bestellung 140 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4128DY-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFET 30V Vds 20V Vgs SO-8
MOSFET 30V Vds 20V Vgs SO-8
auf Bestellung 3326 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1 EUR |
| 10+ | 0.86 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.42 EUR |
| 2500+ | 0.37 EUR |
| 5000+ | 0.36 EUR |
| SI4128DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 10.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
Description: MOSFET N-CH 30V 10.9A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 435 pF @ 15 V
auf Bestellung 8157 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.55 EUR |
| 18+ | 0.99 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |
| SI4128DY-T1-E3 |
|
auf Bestellung 140 Stücke:
Lieferzeit 21-28 Tag (e)