| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.76 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
2500 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4168DY-T1-GE3 Vishay
Description: MOSFET N-CH 30V 24A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24A (Tc), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V, Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 15 V.
Weitere Produktangebote SI4168DY-T1-GE3 nach Preis ab 0.61 EUR bis 3.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI4168DY-T1-GE3 | Vishay |
 Trans MOSFET N-CH 30V 24A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4168DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 24A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 15 V |
auf Bestellung 22500 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4168DY-T1-GE3 | Vishay |
Trans MOSFET N-CH 30V 24A 8-Pin SOIC N T/R |
auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4168DY-T1-GE3 | Vishay |
Trans MOSFET N-CH 30V 24A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
|
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SI4168DY-T1-GE3 | Vishay |
Trans MOSFET N-CH 30V 24A 8-Pin SOIC N T/R |
auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4168DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 24A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 15 V |
auf Bestellung 26145 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4168DY-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs SO-8 |
auf Bestellung 3262 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI4168DY-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 30V 24A 8-Pin SOIC N T/R
Trans MOSFET N-CH 30V 24A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.77 EUR |
| SI4168DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 15 V
Description: MOSFET N-CH 30V 24A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 15 V
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.9 EUR |
| 5000+ | 0.87 EUR |
| 7500+ | 0.84 EUR |
| SI4168DY-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 30V 24A 8-Pin SOIC N T/R
Trans MOSFET N-CH 30V 24A 8-Pin SOIC N T/R
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 162+ | 1.08 EUR |
| 190+ | 0.9 EUR |
| 250+ | 0.88 EUR |
| 500+ | 0.79 EUR |
| 1000+ | 0.71 EUR |
| SI4168DY-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 30V 24A 8-Pin SOIC N T/R
Trans MOSFET N-CH 30V 24A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.24 EUR |
| SI4168DY-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 30V 24A 8-Pin SOIC N T/R
Trans MOSFET N-CH 30V 24A 8-Pin SOIC N T/R
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 137+ | 1.31 EUR |
| 162+ | 1.02 EUR |
| 190+ | 0.83 EUR |
| 250+ | 0.8 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.61 EUR |
| SI4168DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 24A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 15 V
Description: MOSFET N-CH 30V 24A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1720 pF @ 15 V
auf Bestellung 26145 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.57 EUR |
| 12+ | 1.77 EUR |
| 100+ | 1.33 EUR |
| 500+ | 1.15 EUR |
| 1000+ | 1.02 EUR |
| SI4168DY-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 30V Vds 20V Vgs SO-8
MOSFETs 30V Vds 20V Vgs SO-8
auf Bestellung 3262 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.53 EUR |
| 10+ | 2.24 EUR |
| 100+ | 1.46 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.11 EUR |
| 2500+ | 0.95 EUR |
| 5000+ | 0.9 EUR |