| Anzahl | Preis |
|---|---|
| 1+ | 4.15 EUR |
| 10+ | 3.1 EUR |
| 100+ | 2.41 EUR |
| 500+ | 2.01 EUR |
| 1000+ | 1.73 EUR |
| 2500+ | 1.63 EUR |
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Technische Details SI4368DY-T1-E3 Vishay Semiconductors
Description: MOSFET N-CH 30V 17A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 8340 pF @ 15 V.
Weitere Produktangebote SI4368DY-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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SI4368DY-T1-E3 | Vishay Siliconix |
 Description: MOSFET N-CH 30V 17A 8SOVgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.8V @ 250µA Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Input Capacitance (Ciss) (Max) @ Vds: 8340 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Packaging: Cut Tape (CT) |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4368DYT1E3 | VISHAY |
auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
| SI4368DY-T1-E3 | VISHAY |
09+ |
auf Bestellung 10018 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4368DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 17A 8SO
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Input Capacitance (Ciss) (Max) @ Vds: 8340 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 17A 8SO
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Input Capacitance (Ciss) (Max) @ Vds: 8340 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Packaging: Cut Tape (CT)
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| SI4368DYT1E3 |
Hersteller: VISHAY
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)
| SI4368DY-T1-E3 |
|
Hersteller: VISHAY
09+
09+
auf Bestellung 10018 Stücke:
Lieferzeit 21-28 Tag (e)