SI4408DY-T1-GE3 VISHAY
Hersteller: VISHAYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 21A
Pulsed drain current: 60A
Power dissipation: 3.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4408DY-T1-GE3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W, Type of transistor: N-MOSFET, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: 20V, Drain current: 21A, Pulsed drain current: 60A, Power dissipation: 3.5W, Case: SO8, Gate-source voltage: ±20V, On-state resistance: 6.8mΩ, Mounting: SMD, Gate charge: 32nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote SI4408DY-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
SI4408DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 14A 8-SOIC |
Produkt ist nicht verfügbar |
|
 |
SI4408DY-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET 20V 21A 3.5W 4.5mohm @ 10V |
Produkt ist nicht verfügbar |
|
| SI4408DY-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 21A; Idm: 60A; 3.5W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 21A Pulsed drain current: 60A Power dissipation: 3.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |