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SI4421DY-T1-GE3

SI4421DY-T1-GE3 Vishay Siliconix


si4421dy.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 850µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.68 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SI4421DY-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 20V 10A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 800mV @ 850µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V.

Weitere Produktangebote SI4421DY-T1-GE3 nach Preis ab 1.74 EUR bis 5.37 EUR

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SI4421DY-T1-GE3 SI4421DY-T1-GE3 Hersteller : Vishay Semiconductors si4421dy.pdf MOSFETs 20V 14A 3.0W 8.75mohm @ 4.5V
auf Bestellung 10369 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.47 EUR
10+3.40 EUR
100+2.43 EUR
500+1.97 EUR
1000+1.83 EUR
2500+1.74 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SI4421DY-T1-GE3 SI4421DY-T1-GE3 Hersteller : Vishay Siliconix si4421dy.pdf Description: MOSFET P-CH 20V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 850µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
auf Bestellung 13609 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.37 EUR
10+3.49 EUR
100+2.42 EUR
500+1.96 EUR
1000+1.82 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SI4421DY-T1-GE3 SI4421DY-T1-GE3 Hersteller : Vishay si4421dy.pdf Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4421DY-T1-GE3 Hersteller : VISHAY si4421dy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI4421DY-T1-GE3 Hersteller : VISHAY si4421dy.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -14A
Pulsed drain current: -40A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 125nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH