SI4421DY-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SO
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 800mV @ 850µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.68 EUR |
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Technische Details SI4421DY-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SO, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 800mV @ 850µA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SI4421DY-T1-GE3 nach Preis ab 1.57 EUR bis 5.37 EUR
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SI4421DY-T1-GE3 | Vishay Semiconductors |
MOSFETs 20V 14A 3.0W 8.75mohm @ 4.5V |
auf Bestellung 10369 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4421DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 10A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 800mV @ 850µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V |
auf Bestellung 13609 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4421DY-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 20V 14A 3.0W 8.75mohm @ 4.5V
MOSFETs 20V 14A 3.0W 8.75mohm @ 4.5V
auf Bestellung 10369 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 4.82 EUR |
| 10+ | 3.15 EUR |
| 100+ | 2.2 EUR |
| 500+ | 1.78 EUR |
| 1000+ | 1.65 EUR |
| 2500+ | 1.57 EUR |
| SI4421DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 850µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
Description: MOSFET P-CH 20V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 850µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
auf Bestellung 13609 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.37 EUR |
| 10+ | 3.49 EUR |
| 100+ | 2.42 EUR |
| 500+ | 1.96 EUR |
| 1000+ | 1.82 EUR |