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SI4421DY-T1-GE3 Vishay Siliconix


si4421dy.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SO
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 800mV @ 850µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+2 EUR
Mindestbestellmenge: 2500 Stücke
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Technische Details SI4421DY-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 20V 10A 8SO, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 800mV @ 850µA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).

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SI4421DY-T1-GE3 SI4421DY-T1-GE3 Vishay Semiconductors si4421dy.pdf MOSFETs 20V 14A 3.0W 8.75mohm @ 4.5V
auf Bestellung 10369 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.74 EUR
10+3.75 EUR
100+2.62 EUR
500+2.12 EUR
1000+1.96 EUR
2500+1.87 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SI4421DY-T1-GE3 SI4421DY-T1-GE3 Vishay Siliconix si4421dy.pdf Description: MOSFET P-CH 20V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 850µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
auf Bestellung 13609 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.39 EUR
10+4.15 EUR
100+2.88 EUR
500+2.33 EUR
1000+2.17 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI4421DY-T1-GE3 si4421dy.pdf
Hersteller: Vishay Semiconductors
MOSFETs 20V 14A 3.0W 8.75mohm @ 4.5V
auf Bestellung 10369 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+5.74 EUR
10+3.75 EUR
100+2.62 EUR
500+2.12 EUR
1000+1.96 EUR
2500+1.87 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SI4421DY-T1-GE3 si4421dy.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 8.75mOhm @ 14A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 800mV @ 850µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 4.5 V
auf Bestellung 13609 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.39 EUR
10+4.15 EUR
100+2.88 EUR
500+2.33 EUR
1000+2.17 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH