auf Bestellung 5531 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.64 EUR |
| 10+ | 2.92 EUR |
| 100+ | 2.46 EUR |
| 250+ | 2.39 EUR |
| 500+ | 2.16 EUR |
| 1000+ | 1.95 EUR |
| 5000+ | 1.92 EUR |
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Technische Details SI4423DY-T1-E3 Vishay Semiconductors
Description: MOSFET P-CH 20V 10A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 900mV @ 600µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 5 V.
Weitere Produktangebote SI4423DY-T1-E3 nach Preis ab 1.73 EUR bis 4.49 EUR
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SI4423DY-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET P-CH 20V 10A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 900mV @ 600µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 5 V |
auf Bestellung 2383 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4423DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4423DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI4423DYT1E3 | Hersteller : VISHAY |
auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4423DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R |
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| SI4423DY-T1-E3 | Hersteller : VISHAY |
SI4423DY-T1-E3 SMD P channel transistors |
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SI4423DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 10A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 4.5V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 900mV @ 600µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 5 V |
Produkt ist nicht verfügbar |