| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.33 EUR |
| 10+ | 3.47 EUR |
| 100+ | 2.93 EUR |
| 250+ | 2.84 EUR |
| 500+ | 2.57 EUR |
| 1000+ | 2.32 EUR |
| 5000+ | 2.28 EUR |
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Produktbewertung abgeben
Technische Details SI4423DY-T1-E3 Vishay Semiconductors
Description: MOSFET P-CH 20V 10A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 900mV @ 600µA, Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 5 V.
Weitere Produktangebote SI4423DY-T1-E3 nach Preis ab 2.06 EUR bis 5.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SI4423DY-T1-E3 | Vishay Siliconix |
 Description: MOSFET P-CH 20V 10A 8SOGate Charge (Qg) (Max) @ Vgs: 175 nC @ 5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 900mV @ 600µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 4.5V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 2383 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4423DY-T1-E3 | Vishay |
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||
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SI4423DY-T1-E3 | Vishay |
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||
| SI4423DYT1E3 | VISHAY |
auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4423DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 10A 8SO
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 900mV @ 600µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 10A 8SO
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 900mV @ 600µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2383 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.34 EUR |
| 10+ | 3.67 EUR |
| 100+ | 2.64 EUR |
| 500+ | 2.2 EUR |
| 1000+ | 2.06 EUR |
| SI4423DY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| SI4423DY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R
Trans MOSFET P-CH 20V 10A 8-Pin SOIC N T/R
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
| SI4423DYT1E3 |
Hersteller: VISHAY
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)