SI4425DDY-T1-GE3

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 19.7A 8SO
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V

Hersteller: Vishay
Trans MOSFET P-CH 30V 19.7A 8-Pin SOIC N T/R

Hersteller: Vishay
Trans MOSFET P-CH 30V 19.7A 8-Pin SOIC N T/R

Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -15.7A; 3.6W; SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -15.7A
Power dissipation: 3.6W
Case: SO8
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V

Hersteller: Vishay
Trans MOSFET P-CH 30V 19.7A 8-Pin SOIC N T/R

Hersteller: Vishay
Trans MOSFET P-CH 30V 19.7A 8-Pin SOIC N T/R

Hersteller: Vishay
Trans MOSFET P-CH 30V 19.7A 8-Pin SOIC N T/R

Hersteller: Vishay Semiconductors
MOSFETs -30V Vds 20V Vgs SO-8

Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 19.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.7A (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.7W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2610 pF @ 15 V

Hersteller: VISHAY
Description: VISHAY - SI4425DDY-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 19.7 A, 9800 µohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 19.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 1.2V
Verlustleistung: 5.7W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 9800µohm