auf Bestellung 4334 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 108+ | 1.34 EUR |
| 149+ | 0.94 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.7 EUR |
| 2500+ | 0.5 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4431BDY-T1-E3 Vishay
Description: MOSFET P-CH 30V 5.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V.
Weitere Produktangebote SI4431BDY-T1-E3 nach Preis ab 0.48 EUR bis 2.01 EUR
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SI4431BDY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R |
auf Bestellung 4350 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4431BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI4431BDY-T1-E3 | Hersteller : VISHAY |
SI4431BDY-T1-E3 SMD P channel transistors |
auf Bestellung 296 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI4431BDYT1E3 | Hersteller : VISHAY |
auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
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Si4431BDY-T1-E3 Produktcode: 127262
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Lieblingsprodukt
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Transistoren > Transistoren P-Kanal-Feld |
Produkt ist nicht verfügbar
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SI4431BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 5.7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V |
Produkt ist nicht verfügbar |
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SI4431BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 5.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V |
Produkt ist nicht verfügbar |
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SI4431BDY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V (D-S) 7.5A |
Produkt ist nicht verfügbar |