auf Bestellung 4334 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 108+ | 1.38 EUR |
| 149+ | 0.96 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.71 EUR |
| 2500+ | 0.51 EUR |
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Technische Details SI4431BDY-T1-E3 Vishay
Description: MOSFET P-CH 30V 5.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V.
Weitere Produktangebote SI4431BDY-T1-E3 nach Preis ab 0.48 EUR bis 2.53 EUR
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SI4431BDY-T1-E3 | Hersteller : VISHAY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A Mounting: SMD Case: SO8 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -5.7A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 0.9W Polarisation: unipolar Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -30A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 939 Stücke: Lieferzeit 7-14 Tag (e) |
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SI4431BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A Mounting: SMD Case: SO8 Kind of package: reel; tape Drain-source voltage: -30V Drain current: -5.7A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 0.9W Polarisation: unipolar Gate charge: 20nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -30A |
auf Bestellung 939 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4431BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R |
auf Bestellung 4350 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4431BDY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V (D-S) 7.5A |
auf Bestellung 12611 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4431BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 5.7A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V |
auf Bestellung 756 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4431BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 5.7A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI4431BDYT1E3 | Hersteller : VISHAY |
auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4431BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 5.7A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 7.5A, 10V Power Dissipation (Max): 1.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V |
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