SI4435DDY-T1-E3 VISHAY

Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -6.5A; Idm: -50A, Type of transistor: P-MOSFET, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: -30V, Drain current: -6.5A, Pulsed drain current: -50A, Power dissipation: 3.2W, Case: SO8, Gate-source voltage: ±20V, On-state resistance: 35mΩ, Mounting: SMD, Gate charge: 50nC, Kind of package: reel; tape, Kind of channel: enhancement.