Technische Details SI4451DY-T1-GE3 Vishay Siliconix
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -14A; Idm: -40A, Type of transistor: P-MOSFET, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: -12V, Drain current: -14A, Power dissipation: 3W, Case: SO8, Gate-source voltage: ±8V, On-state resistance: 13mΩ, Mounting: SMD, Gate charge: 0.12µC, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: -40A.
Weitere Produktangebote SI4451DY-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| SI4451DY-T1-GE3 | Vishay / Siliconix |
 MOSFET 12V 14A 3.0W 8.25mohm @ 4.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
SI4451DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -14A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -14A Power dissipation: 3W Case: SO8 Gate-source voltage: ±8V On-state resistance: 13mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -40A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SI4451DY-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFET 12V 14A 3.0W 8.25mohm @ 4.5V
MOSFET 12V 14A 3.0W 8.25mohm @ 4.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4451DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -14A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -40A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -14A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -14A
Power dissipation: 3W
Case: SO8
Gate-source voltage: ±8V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -40A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH