Technische Details SI4456DY-T1-GE3 Vishay Siliconix
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 33A; Idm: 70A; 7.8W, Type of transistor: N-MOSFET, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 33A, Power dissipation: 7.8W, Case: SO8, Gate-source voltage: ±20V, On-state resistance: 4.5mΩ, Mounting: SMD, Gate charge: 122nC, Kind of package: reel; tape, Kind of channel: enhancement, Pulsed drain current: 70A.
Weitere Produktangebote SI4456DY-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| SI4456DY-T1-GE3 | Vishay / Siliconix |
 MOSFET 40V 33A 7.8W 3.8mohm @ 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
 |
SI4456DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 33A; Idm: 70A; 7.8W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 33A Power dissipation: 7.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 70A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SI4456DY-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFET 40V 33A 7.8W 3.8mohm @ 10V
MOSFET 40V 33A 7.8W 3.8mohm @ 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4456DY-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 33A; Idm: 70A; 7.8W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Power dissipation: 7.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 70A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 33A; Idm: 70A; 7.8W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 33A
Power dissipation: 7.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 70A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH