SI4467DY ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - SI4467DY - MISCELLANEOUS MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: TBA
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details SI4467DY ONSEMI
Description: P-CHANNEL POWER MOSFET, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk, Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.2W (Ta), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide).
Weitere Produktangebote SI4467DY nach Preis ab 2.19 EUR bis 2.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||
|---|---|---|---|---|---|---|---|---|---|
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SI4467DY | ON Semiconductor |
Trans MOSFET P-CH 20V 13.5A 8-Pin SOIC T/R |
auf Bestellung 784 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4467DY | Fairchild Semiconductor |
Description: P-CHANNEL POWER MOSFET Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 784 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4467DY | FAIRCHILD |
09+ |
auf Bestellung 5318 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4467DY |
|
Hersteller: ON Semiconductor
Trans MOSFET P-CH 20V 13.5A 8-Pin SOIC T/R
Trans MOSFET P-CH 20V 13.5A 8-Pin SOIC T/R
auf Bestellung 784 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 268+ | 2.46 EUR |
| 500+ | 2.19 EUR |
| SI4467DY |
|
Hersteller: Fairchild Semiconductor
Description: P-CHANNEL POWER MOSFET
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Description: P-CHANNEL POWER MOSFET
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 784 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 214+ | 2.53 EUR |
| SI4467DY |
|
Hersteller: FAIRCHILD
09+
09+
auf Bestellung 5318 Stücke:
Lieferzeit 21-28 Tag (e)