auf Bestellung 784 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 268+ | 2.02 EUR |
| 500+ | 1.76 EUR |
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Technische Details SI4467DY ON Semiconductor
Description: P-CHANNEL POWER MOSFET, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V.
Weitere Produktangebote SI4467DY
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SI4467DY | Hersteller : ONSEMI |
 Description: ONSEMI - SI4467DY - MISCELLANEOUS MOSFETStariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 1009 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI4467DY | Hersteller : Fairchild |
04+ SOP-8 |
auf Bestellung 59 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4467DY | Hersteller : FAIRCHILD |
09+ |
auf Bestellung 5318 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4467DY | Hersteller : Fairchild Semiconductor |
Description: P-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V |
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