auf Bestellung 404 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 120+ | 1.17 EUR |
| 121+ | 1.13 EUR |
| 250+ | 1.04 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4488DY-T1-E3 Vishay
Description: MOSFET N-CH 150V 3.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V, Power Dissipation (Max): 1.56W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA (Min), Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V.
Weitere Produktangebote SI4488DY-T1-E3 nach Preis ab 0.99 EUR bis 14.07 EUR
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SI4488DY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4488DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R |
auf Bestellung 404 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4488DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 150V 3.5A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4488DY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 150V Vds 20V Vgs SO-8 |
auf Bestellung 11395 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4488DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 150V 3.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V |
auf Bestellung 4291 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4488DY-T1-E3 | Hersteller : VISHAY |
MOSFET N-CH 150V 3.5A 8-SOIC |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI4488DYT1E3 | Hersteller : VISHAY |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4488DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4488DY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| SI4488DY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.8A; Idm: 50A; 1W Mounting: SMD Drain-source voltage: 150V Drain current: 2.8A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 36nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Case: SO8 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| SI4488DY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.8A; Idm: 50A; 1W Mounting: SMD Drain-source voltage: 150V Drain current: 2.8A On-state resistance: 50mΩ Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 36nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 50A Case: SO8 |
Produkt ist nicht verfügbar |