SI4488DY-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3.5A 8SO
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-SOIC
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Technische Details SI4488DY-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 150V 3.5A 8SO, Vgs(th) (Max) @ Id: 2V @ 250µA (Min), Power Dissipation (Max): 1.56W (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: 8-SOIC.
Weitere Produktangebote SI4488DY-T1-E3 nach Preis ab 1.88 EUR bis 14.09 EUR
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SI4488DY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 3.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V |
auf Bestellung 5795 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4488DY-T1-E3 | Vishay Semiconductors |
MOSFETs 150V Vds 20V Vgs SO-8 |
auf Bestellung 7448 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4488DY-T1-E3 | Vishay |
Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R |
auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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SI4488DY-T1-E3 | Vishay |
Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R |
auf Bestellung 54 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| SI4488DY-T1-E3 | VISHAY |
MOSFET N-CH 150V 3.5A 8-SOIC |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI4488DYT1E3 | VISHAY |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4488DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Description: MOSFET N-CH 150V 3.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
auf Bestellung 5795 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.95 EUR |
| SI4488DY-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 150V Vds 20V Vgs SO-8
MOSFETs 150V Vds 20V Vgs SO-8
auf Bestellung 7448 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.24 EUR |
| 10+ | 2.76 EUR |
| 100+ | 2.06 EUR |
| 500+ | 1.88 EUR |
| SI4488DY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
| SI4488DY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
Trans MOSFET N-CH 150V 3.5A 8-Pin SOIC N T/R
auf Bestellung 54 Stücke:
Lieferzeit 14-21 Tag (e)
| SI4488DY-T1-E3 |
|
Hersteller: VISHAY
MOSFET N-CH 150V 3.5A 8-SOIC
MOSFET N-CH 150V 3.5A 8-SOIC
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 14.09 EUR |
| SI4488DYT1E3 |
Hersteller: VISHAY
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)