SI4488DY-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
| Anzahl | Preis |
|---|---|
| 2500+ | 1.59 EUR |
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Technische Details SI4488DY-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 150V 3.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V, Power Dissipation (Max): 1.56W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA (Min), Supplier Device Package: 8-SOIC, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V.
Weitere Produktangebote SI4488DY-T1-GE3 nach Preis ab 1.67 EUR bis 4.72 EUR
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SI4488DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 150V 3.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V |
auf Bestellung 5478 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4488DY-T1-GE3 | Vishay Semiconductors |
MOSFETs 150V Vds 20V Vgs SO-8 |
auf Bestellung 1410 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI4488DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 150V 3.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Description: MOSFET N-CH 150V 3.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
auf Bestellung 5478 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.7 EUR |
| 10+ | 3.27 EUR |
| 100+ | 2.27 EUR |
| 500+ | 1.95 EUR |
| SI4488DY-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 150V Vds 20V Vgs SO-8
MOSFETs 150V Vds 20V Vgs SO-8
auf Bestellung 1410 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 4.72 EUR |
| 10+ | 3.29 EUR |
| 100+ | 2.31 EUR |
| 500+ | 1.99 EUR |
| 1000+ | 1.97 EUR |
| 2500+ | 1.67 EUR |