Technische Details SI4505DYT1E3 VISHAY
Description: MOSFET N/P-CH 30V/8V 6A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 30V, 8V, Current - Continuous Drain (Id) @ 25°C: 6A, 3.8A, Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.8V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote SI4505DYT1E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| Si4505DY-T1-E3 | Hersteller : VISHAY |
 2005 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| Si4505DY-T1-E3 | Hersteller : VISHAY |
SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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Si4505DY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N/P-CH 30V/8V 6A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V, 8V Current - Continuous Drain (Id) @ 25°C: 6A, 3.8A Rds On (Max) @ Id, Vgs: 18mOhm @ 7.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.8V @ 250µA Supplier Device Package: 8-SOIC |
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