SI4511DY-T1-E3 VISHAY

Description: MOSFET N/P-CH 20V 7.2A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.8V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V, Rds On (Max) @ Id, Vgs: 14.5mOhm @ 9.6A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.2A, 4.6A, Drain to Source Voltage (Vdss): 20V, Power - Max: 1.1W, Technology: MOSFET (Metal Oxide), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Cut Tape (CT).