SI4562DYT1E3 VISHAY

Description: MOSFET N/P-CH 20V 8SOIC, Power - Max: 2W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.6V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 50nC @ 4.5V, Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 4.5V, Drain to Source Voltage (Vdss): 20V.