Technische Details SI4626ADY-T1-E3 VISHAY
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 6W, Type of transistor: N-MOSFET, Technology: TrenchFET®, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 30A, Pulsed drain current: 70A, Power dissipation: 6W, Case: SO8, Gate-source voltage: ±20V, On-state resistance: 4.1mΩ, Mounting: SMD, Gate charge: 125nC, Kind of package: reel; tape, Kind of channel: enhancement, Anzahl je Verpackung: 2500 Stücke.
Weitere Produktangebote SI4626ADY-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SI4626ADY-T1-E3 | Hersteller : VISHAY |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 70A Power dissipation: 6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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SI4626ADY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 30A 8-SOIC |
Produkt ist nicht verfügbar |
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SI4626ADY-T1-E3 | Hersteller : Vishay / Siliconix |
MOSFETs 30V 30A 6.0W 3.3mohm @ 10V |
Produkt ist nicht verfügbar |
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| SI4626ADY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 70A Power dissipation: 6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 4.1mΩ Mounting: SMD Gate charge: 125nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |