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Technische Details SI4774DY-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CHANNEL 30V 16A 8SO, Current - Continuous Drain (Id) @ 25°C: 16A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TA), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.3V @ 1mA, Power Dissipation (Max): 5W (Tc), FET Feature: Schottky Diode (Body), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V.
Weitere Produktangebote SI4774DY-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI4774DY-T1-GE3 | Vishay Siliconix |
 Description: MOSFET N-CHANNEL 30V 16A 8SOCurrent - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.3V @ 1mA Power Dissipation (Max): 5W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V |
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SI4774DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CHANNEL 30V 16A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.3V @ 1mA Power Dissipation (Max): 5W (Tc) FET Feature: Schottky Diode (Body) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 16A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI4774DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 30V 16A 8SO
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 5W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Description: MOSFET N-CHANNEL 30V 16A 8SO
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 5W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4774DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CHANNEL 30V 16A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 5W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CHANNEL 30V 16A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.3V @ 1mA
Power Dissipation (Max): 5W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH