SI4808DYT1E3 VISHAY

Description: MOSFET 2N-CH 30V 5.7A 8SOIC, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 800mV @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V, Rds On (Max) @ Id, Vgs: 22mOhm @ 7.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.7A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).