Weitere Produktangebote SI4812BDY-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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| SI4812BDYT1E3 | Hersteller : VISHAY |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4812BDY-T1-E3 | Hersteller : VISHAY |
 SOP8 06+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4812BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 7.3A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V |
Produkt ist nicht verfügbar |
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SI4812BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 7.3A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 9.5A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V |
Produkt ist nicht verfügbar |
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SI4812BDY-T1-E3 | Hersteller : Vishay / Siliconix |
MOSFET 30V 9A 2.5W |
Produkt ist nicht verfügbar |