Si4818DY-T1-E3 VISHAY

Description: MOSFET 2N-CH 30V 5.3A/7A 8SOIC, Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 800mV @ 250µA (Min), FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V, Rds On (Max) @ Id, Vgs: 22mOhm @ 6.3A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.3A, 7A, Drain to Source Voltage (Vdss): 30V, Power - Max: 1W, 1.25W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).