SI4823DY-T1-E3 Vishay Siliconix

Description: MOSFET P-CH 20V 4.1A 8SO, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.7W (Ta), 2.8W (Tc), FET Feature: Schottky Diode (Isolated), Rds On (Max) @ Id, Vgs: 108mOhm @ 3.3A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide).