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Technische Details SI4835DDY-T1-E3 Vishay
Description: VISHAY - SI4835DDY-T1-E3 - Leistungs-MOSFET, p-Kanal, 30 V, 13 A, 0.018 ohm, SOIC, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 13A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 3V, Verlustleistung: 2.5W, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: p-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.018ohm.
Weitere Produktangebote SI4835DDY-T1-E3 nach Preis ab 0.74 EUR bis 3.58 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SI4835DDY-T1-E3 | Vishay |
 Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4835DDY-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 13A 8SO Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 13A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4835DDY-T1-E3 | Vishay |
Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R |
auf Bestellung 1433 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4835DDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.7A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -7.7A Pulsed drain current: -50A Power dissipation: 3.6W Case: SO8 Gate-source voltage: ±25V On-state resistance: 18mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1433 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4835DDY-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 13A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V |
auf Bestellung 4728 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4835DDY-T1-E3 | Vishay Semiconductors |
MOSFETs -30V Vds 25V Vgs SO-8 |
auf Bestellung 5849 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4835DDY-T1-E3 | VISHAY |
Description: VISHAY - SI4835DDY-T1-E3 - Leistungs-MOSFET, p-Kanal, 30 V, 13 A, 0.018 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 13A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 2.5W SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.018ohm |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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SI4835DDY-T1-E3 | VISHAY |
Description: VISHAY - SI4835DDY-T1-E3 - Leistungs-MOSFET, p-Kanal, 30 V, 13 A, 0.018 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR isCanonical: Y hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 150 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| SI4835DDY-T1-E3 | Siliconix |
P-MOSFET 13A 30V 5,6W SI4835DDY SMD TSI4835ddy Anzahl je Verpackung: 10 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI4835DDYT1E3 | VISHAY |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4835DDY-T1-E3 |
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Hersteller: Vishay
Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R
Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.99 EUR |
| SI4835DDY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 13A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 30V 13A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.04 EUR |
| SI4835DDY-T1-E3 |
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Hersteller: Vishay
Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R
Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R
auf Bestellung 1433 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 86+ | 2.05 EUR |
| 126+ | 1.37 EUR |
| 250+ | 1.18 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.95 EUR |
| SI4835DDY-T1-E3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.7A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.7A
Pulsed drain current: -50A
Power dissipation: 3.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -7.7A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.7A
Pulsed drain current: -50A
Power dissipation: 3.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1433 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 38+ | 2.3 EUR |
| 59+ | 1.46 EUR |
| 100+ | 1 EUR |
| 250+ | 0.88 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.74 EUR |
| SI4835DDY-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 13A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V
Description: MOSFET P-CH 30V 13A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V
auf Bestellung 4728 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.5 EUR |
| 10+ | 2.33 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.15 EUR |
| SI4835DDY-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -30V Vds 25V Vgs SO-8
MOSFETs -30V Vds 25V Vgs SO-8
auf Bestellung 5849 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.58 EUR |
| 10+ | 2.28 EUR |
| 100+ | 1.54 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 1.11 EUR |
| 2500+ | 0.99 EUR |
| SI4835DDY-T1-E3 |
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Hersteller: VISHAY
Description: VISHAY - SI4835DDY-T1-E3 - Leistungs-MOSFET, p-Kanal, 30 V, 13 A, 0.018 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 13A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 2.5W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.018ohm
Description: VISHAY - SI4835DDY-T1-E3 - Leistungs-MOSFET, p-Kanal, 30 V, 13 A, 0.018 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 13A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 2.5W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.018ohm
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| SI4835DDY-T1-E3 |
|
Hersteller: VISHAY
Description: VISHAY - SI4835DDY-T1-E3 - Leistungs-MOSFET, p-Kanal, 30 V, 13 A, 0.018 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Description: VISHAY - SI4835DDY-T1-E3 - Leistungs-MOSFET, p-Kanal, 30 V, 13 A, 0.018 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: Y
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
| SI4835DDY-T1-E3 |
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auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.15 EUR |
| SI4835DDYT1E3 |
Hersteller: VISHAY
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)