SI4835DDY-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 13A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V
Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V
| Anzahl | Preis |
|---|---|
| 2500+ | 0.87 EUR |
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Technische Details SI4835DDY-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 30V 13A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V, Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V.
Weitere Produktangebote SI4835DDY-T1-E3 nach Preis ab 0.83 EUR bis 3.01 EUR
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SI4835DDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 13A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 2.5W (Ta), 5.6W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1960 pF @ 15 V |
auf Bestellung 4728 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4835DDY-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs -30V Vds 25V Vgs SO-8 |
auf Bestellung 6002 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4835DDY-T1-E3 | Hersteller : Siliconix |
P-MOSFET 13A 30V 5,6W SI4835DDY SMD TSI4835ddy Anzahl je Verpackung: 10 Stücke |
auf Bestellung 30 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI4835DDYT1E3 | Hersteller : VISHAY |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4835DDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R |
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SI4835DDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 13A 8-Pin SOIC N T/R |
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| SI4835DDY-T1-E3 | Hersteller : Vishay Semiconductor |
P-канальний ПТ, Udss, В = 30, Id = 13 А, Ciss, пФ @ Uds, В = 1960 @ 15, Qg, нКл = 65 @ 10 В, Rds = 18 мОм @ 10 A, 10 В, Ugs(th) = 3 В @ 250 мкА, Р, Вт = 2,5, 5,6, Тексп, °C = -55...+150, Тип монт. = smd,... Група товару: Транзистори Корпус: SOICN-8 Од. ви Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |