Produkte > VISHAY > SI4836DYT1E3

SI4836DYT1E3 VISHAY


Hersteller: VISHAY

auf Bestellung 35000 Stücke:

Lieferzeit 21-28 Tag (e)
Produktrezensionen
Produktbewertung abgeben

Technische Details SI4836DYT1E3 VISHAY

Description: MOSFET N-CH 12V 17A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 400mV @ 250µA (Min), Supplier Device Package: 8-SOIC, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V.

Weitere Produktangebote SI4836DYT1E3

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
Si4836DY-T1-E3 Hersteller : VISHAY 71692.pdf 0828+ SOP8
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Si4836DY-T1-E3 Hersteller : VISHAY 71692.pdf 09+
auf Bestellung 5018 Stücke:
Lieferzeit 21-28 Tag (e)
Si4836DY-T1-E3 Hersteller : VISHAY 71692.pdf SO-8
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
SI4836DY-T1-E3 SI4836DY-T1-E3 Hersteller : Vishay 71692.pdf Trans MOSFET N-CH 12V 17A 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
Si4836DY-T1-E3 Si4836DY-T1-E3 Hersteller : Vishay Siliconix 71692.pdf Description: MOSFET N-CH 12V 17A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V
Produkt ist nicht verfügbar
Si4836DY-T1-E3 Si4836DY-T1-E3 Hersteller : Vishay Siliconix 71692.pdf Description: MOSFET N-CH 12V 17A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 400mV @ 250µA (Min)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 4.5 V
Produkt ist nicht verfügbar