SI4862DY-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 16V 17A 8SO, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 600mV @ 250µA (Min), Power Dissipation (Max): 1.6W (Ta), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V, Drain to Source Voltage (Vdss): 16 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V.