SI4864DY-T1-GE3 Vishay / Siliconix
auf Bestellung 518 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 6.67 EUR |
| 10+ | 5.60 EUR |
| 25+ | 5.42 EUR |
| 100+ | 4.54 EUR |
| 250+ | 4.38 EUR |
| 500+ | 4.03 EUR |
| 1000+ | 3.45 EUR |
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Technische Details SI4864DY-T1-GE3 Vishay / Siliconix
Description: MOSFET N-CH 20V 17A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 4.5V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V.
Weitere Produktangebote SI4864DY-T1-GE3 nach Preis ab 3.00 EUR bis 8.17 EUR
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SI4864DY-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 20V 17A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V |
auf Bestellung 2203 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4864DY-T1-GE3 Produktcode: 194029
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Transistoren > MOSFET N-CH |
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SI4864DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 17A 8-Pin SOIC N T/R |
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SI4864DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 17A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V |
Produkt ist nicht verfügbar |