Weitere Produktangebote SI4864DY-T1-GE3 nach Preis ab 3.57 EUR bis 9.72 EUR
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SI4864DY-T1-GE3 | Vishay / Siliconix |
 MOSFET 20V 25A 3.5W 3.5mohm @ 4.5V |
auf Bestellung 518 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4864DY-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 17A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V |
auf Bestellung 2203 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4864DY-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFET 20V 25A 3.5W 3.5mohm @ 4.5V
MOSFET 20V 25A 3.5W 3.5mohm @ 4.5V
auf Bestellung 518 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.94 EUR |
| 10+ | 6.66 EUR |
| 25+ | 6.45 EUR |
| 100+ | 5.4 EUR |
| 250+ | 5.21 EUR |
| 500+ | 4.8 EUR |
| 1000+ | 4.11 EUR |
| SI4864DY-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 17A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
Description: MOSFET N-CH 20V 17A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V
auf Bestellung 2203 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.72 EUR |
| 10+ | 6.47 EUR |
| 100+ | 4.62 EUR |
| 500+ | 3.82 EUR |
| 1000+ | 3.57 EUR |