Weitere Produktangebote SI4864DY-T1-GE3 nach Preis ab 3 EUR bis 8.17 EUR
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SI4864DY-T1-GE3 | Hersteller : Vishay / Siliconix |
 MOSFET 20V 25A 3.5W 3.5mohm @ 4.5V |
auf Bestellung 518 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4864DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 17A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V |
auf Bestellung 2203 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4864DY-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 17A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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SI4864DY-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 17A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 4.5V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 4.5 V |
Produkt ist nicht verfügbar |