auf Bestellung 1760 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 151+ | 1.04 EUR |
| 158+ | 0.96 EUR |
| 177+ | 0.82 EUR |
| 200+ | 0.76 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.65 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4874BDY-T1-E3 Vishay
Description: MOSFET N-CH 30V 12A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 15 V.
Weitere Produktangebote SI4874BDY-T1-E3 nach Preis ab 0.57 EUR bis 3.25 EUR
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SI4874BDY-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R |
auf Bestellung 701 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4874BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R |
auf Bestellung 701 Stücke: Lieferzeit 14-21 Tag (e) |
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Si4874BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 12A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 15 V |
auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) |
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Si4874BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 12A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 15 V |
auf Bestellung 9703 Stücke: Lieferzeit 21-28 Tag (e) |
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Si4874BDY-T1-E3 | Hersteller : Vishay Semiconductors | MOSFET 30V 16A 0.007Ohm |
auf Bestellung 3440 Stücke: Lieferzeit 14-28 Tag (e) |
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| Si4874BDY-T1-E3 | Hersteller : VISHAY |
auf Bestellung 1698 Stücke: Lieferzeit 21-28 Tag (e) |
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| SI4874BDYT1E3 | Hersteller : VISHAY |
auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4874BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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| Si4874BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3W Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 25nC Technology: TrenchFET® Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 50A Type of transistor: N-MOSFET Power dissipation: 3W On-state resistance: 8.5mΩ Drain current: 16A Drain-source voltage: 30V Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| Si4874BDY-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 16A; Idm: 50A; 3W Polarisation: unipolar Kind of package: reel; tape Case: SO8 Gate charge: 25nC Technology: TrenchFET® Kind of channel: enhanced Mounting: SMD Gate-source voltage: ±20V Pulsed drain current: 50A Type of transistor: N-MOSFET Power dissipation: 3W On-state resistance: 8.5mΩ Drain current: 16A Drain-source voltage: 30V |
Produkt ist nicht verfügbar |