| Anzahl | Privatkunde |
|---|---|
| 149+ | 1.2 EUR |
| 159+ | 1.11 EUR |
| 200+ | 1.08 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.96 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
149 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SI4874BDY-T1-E3 Vishay
Description: MOSFET N-CH 30V 12A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 15 V.
Weitere Produktangebote SI4874BDY-T1-E3 nach Preis ab 0.93 EUR bis 5.4 EUR
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SI4874BDY-T1-E3 | Vishay |
 Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R |
auf Bestellung 263 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4874BDY-T1-E3 | Vishay |
Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R |
auf Bestellung 263 Stücke: Lieferzeit 14-21 Tag (e) |
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Si4874BDY-T1-E3 | Vishay Semiconductors |
MOSFETs 30V 16A 0.007Ohm |
auf Bestellung 3205 Stücke: Lieferzeit 10-14 Tag (e) |
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Si4874BDY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 12A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 15 V |
auf Bestellung 1936 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4874BDYT1E3 | VISHAY |
auf Bestellung 40000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4874BDY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R
Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 146+ | 1.23 EUR |
| 147+ | 1.2 EUR |
| 148+ | 1.17 EUR |
| 250+ | 1.02 EUR |
| SI4874BDY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R
Trans MOSFET N-CH 30V 12A 8-Pin SOIC N T/R
auf Bestellung 263 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 137+ | 1.31 EUR |
| 146+ | 1.18 EUR |
| 147+ | 1.13 EUR |
| 148+ | 1.07 EUR |
| 250+ | 0.93 EUR |
| Si4874BDY-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 30V 16A 0.007Ohm
MOSFETs 30V 16A 0.007Ohm
auf Bestellung 3205 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.58 EUR |
| 10+ | 1.57 EUR |
| Si4874BDY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 12A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 15 V
Description: MOSFET N-CH 30V 12A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 15 V
auf Bestellung 1936 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.4 EUR |
| 10+ | 3.49 EUR |
| 50+ | 2.67 EUR |
| 100+ | 2.4 EUR |
| 500+ | 1.94 EUR |
| SI4874BDYT1E3 |
Hersteller: VISHAY
auf Bestellung 40000 Stücke:
Lieferzeit 21-28 Tag (e)