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Technische Details SI4896DY-T1-E3 Vishay
Description: MOSFET N-CH 80V 6.7A 8SO, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Part Status: Active, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2V @ 250µA (Min), Power Dissipation (Max): 1.56W (Ta), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote SI4896DY-T1-E3 nach Preis ab 1.43 EUR bis 5.53 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SI4896DY-T1-E3 | Vishay |
 Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R |
auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4896DY-T1-E3 | Vishay |
Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R |
auf Bestellung 171 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4896DY-T1-E3 | Vishay |
Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R |
auf Bestellung 171 Stücke: Lieferzeit 14-21 Tag (e) |
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SI4896DY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 6.7A 8SO Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4896DY-T1-E3 | Vishay Semiconductors |
MOSFETs 80V Vds 20V Vgs SO-8 |
auf Bestellung 2569 Stücke: Lieferzeit 10-14 Tag (e) |
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SI4896DY-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 80V 6.7A 8SO Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Power Dissipation (Max): 1.56W (Ta) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 4098 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4896DYT1E3 | VISHAY |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SI4896DY_T1_E3 | VISHAY | 0643 |
auf Bestellung 1367 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| SI4896DY-T1-E3 | VISHAY |
SO-8 |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI4896DY-T1-E3 |
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Hersteller: Vishay
Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R
Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.55 EUR |
| SI4896DY-T1-E3 |
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Hersteller: Vishay
Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R
Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 78+ | 2.27 EUR |
| 88+ | 1.86 EUR |
| 111+ | 1.43 EUR |
| SI4896DY-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R
Trans MOSFET N-CH 80V 6.7A 8-Pin SOIC N T/R
auf Bestellung 171 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 78+ | 2.27 EUR |
| 88+ | 1.93 EUR |
| 111+ | 1.5 EUR |
| SI4896DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 6.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 80V 6.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 2.27 EUR |
| SI4896DY-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 80V Vds 20V Vgs SO-8
MOSFETs 80V Vds 20V Vgs SO-8
auf Bestellung 2569 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.94 EUR |
| 10+ | 3.08 EUR |
| 100+ | 2.48 EUR |
| 250+ | 2.45 EUR |
| 500+ | 2.43 EUR |
| 2500+ | 1.87 EUR |
| SI4896DY-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 80V 6.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 6.7A 8SO
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Power Dissipation (Max): 1.56W (Ta)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 4098 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.53 EUR |
| 10+ | 3.95 EUR |
| 100+ | 2.73 EUR |
| 500+ | 2.4 EUR |
| SI4896DYT1E3 |
Hersteller: VISHAY
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
| SI4896DY_T1_E3 |
Hersteller: VISHAY
0643
0643
auf Bestellung 1367 Stücke:
Lieferzeit 21-28 Tag (e)
| SI4896DY-T1-E3 |
|
Hersteller: VISHAY
SO-8
SO-8
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)