SI4916DY-T1-GE3 Vishay / Siliconix

Description: MOSFET 2N-CH 30V 10A/10.5A 8SOIC, Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V, Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A, Drain to Source Voltage (Vdss): 30V, Power - Max: 3.3W, 3.5W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).