SI4925BDY-T1-E3 Vishay Semiconductors
auf Bestellung 17364 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.63 EUR |
| 10+ | 2.36 EUR |
| 100+ | 1.60 EUR |
| 500+ | 1.27 EUR |
| 1000+ | 1.22 EUR |
| 25000+ | 1.14 EUR |
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Technische Details SI4925BDY-T1-E3 Vishay Semiconductors
Description: MOSFET 2P-CH 30V 5.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.3A, Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.
Weitere Produktangebote SI4925BDY-T1-E3 nach Preis ab 1.21 EUR bis 3.75 EUR
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SI4925BDY-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET 2P-CH 30V 5.3A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 3286 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI4925BDYT1E3 | Hersteller : VISHAY |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI4925BDY-T1-E3 Produktcode: 173526
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Lieblingsprodukt
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Transistoren > Transistoren P-Kanal-Feld |
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SI4925BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC N T/R |
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SI4925BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC N T/R |
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SI4925BDY-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 5.3A 8-Pin SOIC N T/R |
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SI4925BDY-T1-E3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.7A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.7A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI4925BDY-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET 2P-CH 30V 5.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
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SI4925BDY-T1-E3 | Hersteller : VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -30V; -5.7A; 2W; SO8 Type of transistor: P-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.7A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |