SI4925BDY-T1-E3 Vishay Semiconductors

Description: MOSFET 2P-CH 30V 5.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.3A, Rds On (Max) @ Id, Vgs: 25mOhm @ 7.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active.