SI4933DY-T1-E3 VISHAY

Description: MOSFET 2P-CH 12V 7.4A 8-SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 1V @ 500µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 70nC @ 4.5V, Rds On (Max) @ Id, Vgs: 14mOhm @ 9.8A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 7.4A, Drain to Source Voltage (Vdss): 12V, Power - Max: 1.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).