Technische Details SI4942DY-T1-E3 VISHAY
Description: MOSFET 2N-CH 40V 5.3A 8SOIC, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Part Status: Obsolete, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 3V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V, Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.3A, Drain to Source Voltage (Vdss): 40V, Power - Max: 1.1W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual).
Weitere Produktangebote SI4942DY-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| SI4942DYT1E3 | VISHAY |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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SI4942DY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 5.3A 8SOIC Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V Current - Continuous Drain (Id) @ 25°C: 5.3A Drain to Source Voltage (Vdss): 40V Power - Max: 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SI4942DY-T1-E3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 5.3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 5.3A Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
SI4942DY-T1-E3 | Vishay / Siliconix | MOSFETs RECOMMENDED ALT SI4288DY-T1-GE3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI4942DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4942DY-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET 2N-CH 40V 5.3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Rds On (Max) @ Id, Vgs: 21mOhm @ 7.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI4942DY-T1-E3 |
Hersteller: Vishay / Siliconix
MOSFETs RECOMMENDED ALT SI4288DY-T1-GE3
MOSFETs RECOMMENDED ALT SI4288DY-T1-GE3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH