SI4943BDY-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET 2P-CH 20V 6.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.3A
Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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Technische Details SI4943BDY-T1-GE3 Vishay Siliconix
Description: MOSFET 2P-CH 20V 6.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.3A, Rds On (Max) @ Id, Vgs: 19mOhm @ 8.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC.
Weitere Produktangebote SI4943BDY-T1-GE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SI4943BDY-T1-GE3 | Vishay / Siliconix |
MOSFETs 20V 8.4A 2.0W 19mohm @ 10V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SI4943BDY-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 20V 8.4A 2.0W 19mohm @ 10V
MOSFETs 20V 8.4A 2.0W 19mohm @ 10V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH