SI5402DC-T1-E3
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Technische Details SI5402DC-T1-E3
Description: MOSFET N-CH 30V 4.9A 1206-8, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 1206-8 ChipFET™, Vgs(th) (Max) @ Id: 1V @ 250µA (Min), Power Dissipation (Max): 1.3W (Ta), Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI5402DC-T1-E3
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SI5402DC-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 4.9A 1206-8 Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 1206-8 ChipFET™ Vgs(th) (Max) @ Id: 1V @ 250µA (Min) Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 4.9A, 10V Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) |
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