SI5406DC-T1-E3
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Technische Details SI5406DC-T1-E3
Description: MOSFET N-CH 12V 6.9A 1206-8, Power Dissipation (Max): 1.3W (Ta), Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: 1206-8 ChipFET™, Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min).
Weitere Produktangebote SI5406DC-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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|---|---|---|---|---|---|
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SI5406DC-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 12V 6.9A 1206-8 Power Dissipation (Max): 1.3W (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 1206-8 ChipFET™ Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI5406DC-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 12V 6.9A 1206-8
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min)
Description: MOSFET N-CH 12V 6.9A 1206-8
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 600mV @ 1.2mA (Min)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH