SI5463EDC-T1-E3
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Technische Details SI5463EDC-T1-E3
Description: MOSFET P-CH 20V 3.8A 1206-8, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Leads, Packaging: Tape & Reel (TR), Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 1206-8 ChipFET™, Vgs(th) (Max) @ Id: 450mV @ 250µA (Min), Power Dissipation (Max): 1.25W (Ta), Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), FET Type: P-Channel.
Weitere Produktangebote SI5463EDC-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI5463EDC-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 3.8A 1206-8 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 1206-8 ChipFET™ Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) FET Type: P-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI5463EDC-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A 1206-8
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: P-Channel
Description: MOSFET P-CH 20V 3.8A 1206-8
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 1206-8 ChipFET™
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Power Dissipation (Max): 1.25W (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: P-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH